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1 Ergebnisse
1
Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline S..:
Sun, Chong-Jhe
;
Tsai, Meng-Ju
;
Yan, Siao-Cheng
...
IEEE Journal of the Electron Devices Society. 8 (2020) - p. 1016-1020 , 2020
Link:
https://doi.org/10.1109/jeds.2020.3023953
RT Journal T1
Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High ION/IOFF Ratio
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2020.3023953&Exemplar=1&LAN=DE A1 Sun, Chong-Jhe A1 Tsai, Meng-Ju A1 Yan, Siao-Cheng A1 Chu, Tzu-Ming A1 Hsu, Chieng-Chung A1 Chu, Chun-Lin A1 Luo, Guang-Li A1 Wu, Yung-Chun PB Institute of Electrical and Electronics Engineers (IEEE) YR 2020 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 8 SP 1016 OP 1020 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2020.3023953 DO https://doi.org/10.1109/jeds.2020.3023953 SF ELIB - SuUB Bremen
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