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1 Ergebnisse
1
Alleviation of Negative-Bias Temperature Instability in Si ..:
Zhou, Longda
;
Liu, Qianqian
;
Yang, Hong
...
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 229-235 , 2021
Link:
https://doi.org/10.1109/jeds.2021.3057662
RT Journal T1
Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2021.3057662&Exemplar=1&LAN=DE A1 Zhou, Longda A1 Liu, Qianqian A1 Yang, Hong A1 Ji, Zhigang A1 Xu, Hao A1 Wang, Guilei A1 Simoen, Eddy A1 Jiang, Haojie A1 Luo, Ying A1 Kong, Zhenzhen A1 Bai, Guobin A1 Luo, Jun A1 Yin, Huaxiang A1 Zhao, Chao A1 Wang, Wenwu PB Institute of Electrical and Electronics Engineers (IEEE) YR 2021 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 9 SP 229 OP 235 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2021.3057662 DO https://doi.org/10.1109/jeds.2021.3057662 SF ELIB - SuUB Bremen
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