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1 Ergebnisse
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Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/..:
Hu, Qianlan
;
Gu, Chengru
;
Zhan, Dan
..
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 511-516 , 2021
Link:
https://doi.org/10.1109/jeds.2021.3076305
RT Journal T1 <Title>Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2021.3076305&Exemplar=1&LAN=DE A1 Hu, Qianlan A1 Gu, Chengru A1 Zhan, Dan A1 Li, Xuefei A1 Wu, Yanqing PB Institute of Electrical and Electronics Engineers (IEEE) YR 2021 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 9 SP 511 OP 516 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2021.3076305 DO https://doi.org/10.1109/jeds.2021.3076305 SF ELIB - SuUB Bremen
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