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Statistical and Electrical Modeling of FDSOI Four-Gate Qubi..:
Catapano, Edoardo
;
Ghibaudo, Gerard
;
Casse, Mikael
...
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 582-590 , 2021
Link:
https://doi.org/10.1109/jeds.2021.3082201
RT Journal T1
Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2021.3082201&Exemplar=1&LAN=DE A1 Catapano, Edoardo A1 Ghibaudo, Gerard A1 Casse, Mikael A1 Frutuoso, Tadeu Mota A1 Paz, Bruna Cardoso A1 Bedecarrats, Thomas A1 Apra, Agostino A1 Gaillard, Fred A1 De Franceschi, Silvano A1 Meunier, Tristan A1 Vinet, Maud PB Institute of Electrical and Electronics Engineers (IEEE) YR 2021 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 9 SP 582 OP 590 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2021.3082201 DO https://doi.org/10.1109/jeds.2021.3082201 SF ELIB - SuUB Bremen
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