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1 Ergebnisse
1
High Single-Event Burnout Resistance 4H-SiC Junction Barrie..:
Li, Mao-Bin
;
Cao, Fei
;
Hu, Hai-Fan
...
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 591-598 , 2021
Link:
https://doi.org/10.1109/jeds.2021.3084797
RT Journal T1 <Title>High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2021.3084797&Exemplar=1&LAN=DE A1 Li, Mao-Bin A1 Cao, Fei A1 Hu, Hai-Fan A1 Li, Xing-Ji A1 Yang, Jian-Qun A1 Wang, Ying PB Institute of Electrical and Electronics Engineers (IEEE) YR 2021 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 9 SP 591 OP 598 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2021.3084797 DO https://doi.org/10.1109/jeds.2021.3084797 SF ELIB - SuUB Bremen
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