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1 Ergebnisse
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Formation Mechanism of Rounded SiGe-Etch Front in Isotropic..:
Zhao, Yu
;
Iwase, Taku
;
Satake, Makoto
.
IEEE Journal of the Electron Devices Society. 9 (2021) - p. 1112-1116 , 2021
Link:
https://doi.org/10.1109/jeds.2021.3130916
RT Journal T1 <Title>Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-All-Around FETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2021.3130916&Exemplar=1&LAN=DE A1 Zhao, Yu A1 Iwase, Taku A1 Satake, Makoto A1 Hamamura, Hirotaka PB Institute of Electrical and Electronics Engineers (IEEE) YR 2021 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 9 SP 1112 OP 1116 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2021.3130916 DO https://doi.org/10.1109/jeds.2021.3130916 SF ELIB - SuUB Bremen
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