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1 Ergebnisse
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Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs..:
Ko, Hua-Lun
;
Luc, Quang Ho
;
Huang, Ping
...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 188-191 , 2022
Link:
https://doi.org/10.1109/jeds.2022.3149954
RT Journal T1 <Title>Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2022.3149954&Exemplar=1&LAN=DE A1 Ko, Hua-Lun A1 Luc, Quang Ho A1 Huang, Ping A1 Wu, Jing-Yuan A1 Chen, Si-Meng A1 Tran, Nhan-Ai A1 Hsu, Heng-Tung A1 Chang, Edward Yi PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 10 SP 188 OP 191 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2022.3149954 DO https://doi.org/10.1109/jeds.2022.3149954 SF ELIB - SuUB Bremen
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