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1 Ergebnisse
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A Comparative Study of Single-Event-Burnout for 4H-SiC UMOS..:
Wang, Ying
;
Zhou, Jian-cheng
;
Lin, Mao
...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 373-378 , 2022
Link:
https://doi.org/10.1109/jeds.2022.3158810
RT Journal T1 <Title>A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2022.3158810&Exemplar=1&LAN=DE A1 Wang, Ying A1 Zhou, Jian-cheng A1 Lin, Mao A1 Li, Xing-ji A1 Yang, Jian-Qun A1 Cao, Fei PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 10 SP 373 OP 378 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2022.3158810 DO https://doi.org/10.1109/jeds.2022.3158810 SF ELIB - SuUB Bremen
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