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The Noise Behavior of Gap-Type Amorphous Silicon TFT Under ..:
Tai, Ya-Hsiang
;
Yuan, Yi-Cheng
;
Tu, Cheng-Che
.
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 309-312 , 2022
Link:
https://doi.org/10.1109/jeds.2022.3164082
RT Journal T1 <Title>The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2022.3164082&Exemplar=1&LAN=DE A1 Tai, Ya-Hsiang A1 Yuan, Yi-Cheng A1 Tu, Cheng-Che A1 Wang, Pin-Chun PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 10 SP 309 OP 312 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2022.3164082 DO https://doi.org/10.1109/jeds.2022.3164082 SF ELIB - SuUB Bremen
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