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1 Ergebnisse
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Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-Al..:
Sun, Chong-Jhe
;
Yao, Yi-Ju
;
Yan, Siao-Cheng
...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 408-412 , 2022
Link:
https://doi.org/10.1109/jeds.2022.3179465
RT Journal T1 <Title>Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2022.3179465&Exemplar=1&LAN=DE A1 Sun, Chong-Jhe A1 Yao, Yi-Ju A1 Yan, Siao-Cheng A1 Lin, Yi-Wen A1 Lin, Shan-Wen A1 Hou, Fu-Ju A1 Luo, Guang-Li A1 Wu, Yung-Chun PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 10 SP 408 OP 412 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2022.3179465 DO https://doi.org/10.1109/jeds.2022.3179465 SF ELIB - SuUB Bremen
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