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Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achiev..:

Kim, Dongyoung ; Yun, Nick ; Jang, Seung Yup..
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 495-503 , 2022
Link: https://doi.org/10.1109/jeds.2022.3185526