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1 Ergebnisse
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Hf-Based and Zr-Based Charge Trapping Layer Engineering for..:
Wu, Jui-Sheng
;
Lee, Chih-Chieh
;
Wu, Chia-Hsun
...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 525-531 , 2022
Link:
https://doi.org/10.1109/jeds.2022.3188463
RT Journal T1
Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2022.3188463&Exemplar=1&LAN=DE A1 Wu, Jui-Sheng A1 Lee, Chih-Chieh A1 Wu, Chia-Hsun A1 Huang, Cheng-Jun A1 Liang, Yan-Kui A1 Weng, You-Chen A1 Chang, Edward Yi PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 10 SP 525 OP 531 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2022.3188463 DO https://doi.org/10.1109/jeds.2022.3188463 SF ELIB - SuUB Bremen
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