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1 Ergebnisse
1
O2 and H2O Barrier-Based High Reliability and Stability Usi..:
Shan, Fei
;
Zhao, Han-Lin
;
Wang, Xiao-Lin
..
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 642-648 , 2022
Link:
https://doi.org/10.1109/jeds.2022.3194864
RT Journal T1
O2 and H2O Barrier-Based High Reliability and Stability Using Polytetrafluoroethylene Passivation Layer for Solution Processed Indium Oxide Thin Film Transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2022.3194864&Exemplar=1&LAN=DE A1 Shan, Fei A1 Zhao, Han-Lin A1 Wang, Xiao-Lin A1 Lee, Jae-Yun A1 Kim, Sung-Jin PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 10 SP 642 OP 648 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2022.3194864 DO https://doi.org/10.1109/jeds.2022.3194864 SF ELIB - SuUB Bremen
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