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Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Eq..:

Lee, Meng-Chien ; Chen, Wei-Lun ; Zhao, Yi-Yang...
IEEE Journal of the Electron Devices Society.  11 (2023)  - p. 274-281 , 2023
Link: https://doi.org/10.1109/jeds.2023.3271063