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1 Ergebnisse
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Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small G..:
Lee, Ming-Wen
;
Lin, Yueh-Chin
;
Chang, Po-Sheng
...
IEEE Journal of the Electron Devices Society. 11 (2023) - p. 311-318 , 2023
Link:
https://doi.org/10.1109/jeds.2023.3277796
RT Journal T1
Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2023.3277796&Exemplar=1&LAN=DE A1 Lee, Ming-Wen A1 Lin, Yueh-Chin A1 Chang, Po-Sheng A1 Tsao, Yi-Fan A1 Hsu, Heng-Tung A1 Dee, Chang-Fu A1 Chang, Edward Yi PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 11 SP 311 OP 318 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2023.3277796 DO https://doi.org/10.1109/jeds.2023.3277796 SF ELIB - SuUB Bremen
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