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1 Ergebnisse
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High-Breakdown P-Channel GaN MOS-HFETs With Al2O3-Dielectri..:
Ke, Jian-Hong
;
Lee, Ching-Sung
;
Li, Yu-Xuan
.
IEEE Journal of the Electron Devices Society. 11 (2023) - p. 421-425 , 2023
Link:
https://doi.org/10.1109/jeds.2023.3294911
RT Journal T1 <Title>High-Breakdown P-Channel GaN MOS-HFETs With Al2O3-Dielectric and Drain Field-Plate</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2023.3294911&Exemplar=1&LAN=DE A1 Ke, Jian-Hong A1 Lee, Ching-Sung A1 Li, Yu-Xuan A1 Hsu, Wei-Chou PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 11 SP 421 OP 425 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2023.3294911 DO https://doi.org/10.1109/jeds.2023.3294911 SF ELIB - SuUB Bremen
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