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1 Ergebnisse
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Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielect..:
Huang, Hao
;
Wang, Ying
;
Chen, Ke-Han
.
IEEE Journal of the Electron Devices Society. 11 (2023) - p. 438-443 , 2023
Link:
https://doi.org/10.1109/jeds.2023.3296093
RT Journal T1 <Title>Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2023.3296093&Exemplar=1&LAN=DE A1 Huang, Hao A1 Wang, Ying A1 Chen, Ke-Han A1 Fei, Xin-Xing PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 11 SP 438 OP 443 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2023.3296093 DO https://doi.org/10.1109/jeds.2023.3296093 SF ELIB - SuUB Bremen
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