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Investigation of Static Performances of 1.2kV 4H-SiC MOSFET..:
Mancini, Stephen A.
;
Jang, Seung Yup
;
Chen, Zeyu
...
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 150-158 , 2024
Link:
https://doi.org/10.1109/jeds.2024.3359974
RT Journal T1 <Title>Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All 'Room Temperature' Ion Implantations</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2024.3359974&Exemplar=1&LAN=DE A1 Mancini, Stephen A. A1 Jang, Seung Yup A1 Chen, Zeyu A1 Kim, Dongyoung A1 Bialy, Alex A1 Raghotamacher, Balaji A1 Dudley, Michael A1 Mahadik, Nadeemullah A1 Stahlbush, Robert A1 Al-Jassim, Mowafak A1 Sung, Woongje PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 12 SP 150 OP 158 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2024.3359974 DO https://doi.org/10.1109/jeds.2024.3359974 SF ELIB - SuUB Bremen
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