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1 Ergebnisse
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1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of..:
Hirose, Takeya
;
Okamoto, Yuki
;
Komura, Yusuke
...
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 236-242 , 2024
Link:
https://doi.org/10.1109/jeds.2024.3372053
RT Journal T1 <Title>1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2024.3372053&Exemplar=1&LAN=DE A1 Hirose, Takeya A1 Okamoto, Yuki A1 Komura, Yusuke A1 Mizuguchi, Toshiki A1 Saito, Toshihiko A1 Ito, Minato A1 Kimura, Kiyotaka A1 Inoue, Hiroki A1 Onuki, Tatsuya A1 Ando, Yoshinori A1 Sawai, Hiromi A1 Murakawa, Tsutomu A1 Kunitake, Hitoshi A1 Kimura, Hajime A1 Matsuzaki, Takanori A1 Ikeda, Makoto A1 Yamazaki, Shunpei PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 12 SP 236 OP 242 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2024.3372053 DO https://doi.org/10.1109/jeds.2024.3372053 SF ELIB - SuUB Bremen
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