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1 Ergebnisse
1
Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW..:
Li, Jialun
;
Zhu, Renqiang
;
Wong, Ka Ming
.
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 318-321 , 2024
Link:
https://doi.org/10.1109/jeds.2024.3386857
RT Journal T1 <Title>Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2024.3386857&Exemplar=1&LAN=DE A1 Li, Jialun A1 Zhu, Renqiang A1 Wong, Ka Ming A1 Lau, Kei May PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 12 SP 318 OP 321 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2024.3386857 DO https://doi.org/10.1109/jeds.2024.3386857 SF ELIB - SuUB Bremen
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