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1 Ergebnisse
1
Increased Threshold Voltage of Amorphous InGaZnO Thin-Film ..:
Hong, Dongsheng
;
Zhang, Bing
;
Zhang, Dongli
..
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 331-337 , 2024
Link:
https://doi.org/10.1109/jeds.2024.3388727
RT Journal T1 <Title>Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2024.3388727&Exemplar=1&LAN=DE A1 Hong, Dongsheng A1 Zhang, Bing A1 Zhang, Dongli A1 Wang, Mingxiang A1 Wang, Rongxin PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 12 SP 331 OP 337 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2024.3388727 DO https://doi.org/10.1109/jeds.2024.3388727 SF ELIB - SuUB Bremen
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