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1 Ergebnisse
1
Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film T..:
Zhang, Wenyang
;
Lu, Li
;
Li, Chenfei
...
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 502-507 , 2024
Link:
https://doi.org/10.1109/jeds.2024.3424545
RT Journal T1
Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jeds.2024.3424545&Exemplar=1&LAN=DE A1 Zhang, Wenyang A1 Lu, Li A1 Li, Chenfei A1 Jiang, Weijie A1 Wang, Wenzhao A1 Liu, Xingqiang A1 Abliz, Ablat A1 Wan, Da PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 2168-6734 JF IEEE Journal of the Electron Devices Society VO 12 SP 502 OP 507 LK http://dx.doi.org/https://doi.org/10.1109/jeds.2024.3424545 DO https://doi.org/10.1109/jeds.2024.3424545 SF ELIB - SuUB Bremen
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