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1 Ergebnisse
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A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Red..:
Kim, Jeongkyun
;
Yook, Byungho
;
Lee, Youngo
...
IEEE Journal of Solid-State Circuits. 59 (2024) 4 - p. 1216-1224 , 2024
Link:
https://doi.org/10.1109/jssc.2024.3355948
RT Journal T1 <Title>A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_jssc.2024.3355948&Exemplar=1&LAN=DE A1 Kim, Jeongkyun A1 Yook, Byungho A1 Lee, Youngo A1 Choi, Taemin A1 Choi, Kyuwon A1 Lee, Chanho A1 Lee, Juchang A1 Kim, Hyeongcheol A1 Yun, Seok A1 Do, Changhoon A1 Kwak, Minwoo A1 Kim, Mijoung A1 Li, Yunrong A1 Tang, Hoyoung A1 Kim, Jaeyoung A1 Lee, Inhak A1 Seo, Dongwook A1 Baeck, Sangyeop PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0018-9200 SN 1558-173X JF IEEE Journal of Solid-State Circuits VO 59 IS 4 SP 1216 OP 1224 LK http://dx.doi.org/https://doi.org/10.1109/jssc.2024.3355948 DO https://doi.org/10.1109/jssc.2024.3355948 SF ELIB - SuUB Bremen
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