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1 Ergebnisse
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Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type ..:
Wang, Xunxun
;
Yan, Shiqi
;
Mu, Wenxiang
...
IEEE Electron Device Letters. 43 (2022) 1 - p. 44-47 , 2022
Link:
https://doi.org/10.1109/led.2021.3132192
RT Journal T1 <Title>Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2021.3132192&Exemplar=1&LAN=DE A1 Wang, Xunxun A1 Yan, Shiqi A1 Mu, Wenxiang A1 Jia, Zhitai A1 Zhang, Jiawei A1 Xin, Qian A1 Tao, Xutang A1 Song, Aimin PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 43 IS 1 SP 44 OP 47 LK http://dx.doi.org/https://doi.org/10.1109/led.2021.3132192 DO https://doi.org/10.1109/led.2021.3132192 SF ELIB - SuUB Bremen
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