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A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET:
Kim, Myung-Su
;
Yun, Gyeong-Jun
;
Kim, Wu-Kang
...
IEEE Electron Device Letters. 43 (2022) 4 - p. 521-524 , 2022
Link:
https://doi.org/10.1109/led.2022.3151077
RT Journal T1
A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2022.3151077&Exemplar=1&LAN=DE A1 Kim, Myung-Su A1 Yun, Gyeong-Jun A1 Kim, Wu-Kang A1 Seo, Myungsoo A1 Kim, Da-Jin A1 Yu, Ji-Man A1 Han, Joon-Kyu A1 Hur, Jae A1 Lee, Geon-Beom A1 Kim, Seong-Yeon A1 Yun, Dae-Hwan A1 Choi, Yang-Kyu PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 43 IS 4 SP 521 OP 524 LK http://dx.doi.org/https://doi.org/10.1109/led.2022.3151077 DO https://doi.org/10.1109/led.2022.3151077 SF ELIB - SuUB Bremen
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