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1 Ergebnisse
1
Correlation Between Electrical Performance and Gate Width o..:
Sun, Yue
;
Zhang, Haochen
;
Yang, Lei
...
IEEE Electron Device Letters. 43 (2022) 8 - p. 1199-1202 , 2022
Link:
https://doi.org/10.1109/led.2022.3183293
RT Journal T1
Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2022.3183293&Exemplar=1&LAN=DE A1 Sun, Yue A1 Zhang, Haochen A1 Yang, Lei A1 Hu, Kunpeng A1 Xing, Zhanyong A1 Liang, Kun A1 Yu, Huabin A1 Fang, Shi A1 Kang, Yang A1 Wang, Danhao A1 Xu, Guangwei A1 Sun, Haiding A1 Long, Shibing PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 43 IS 8 SP 1199 OP 1202 LK http://dx.doi.org/https://doi.org/10.1109/led.2022.3183293 DO https://doi.org/10.1109/led.2022.3183293 SF ELIB - SuUB Bremen
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