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Impact of the Low Temperature Ohmic Contact Process on DC a..:
Odabasi, Oguz
;
Ghobadi, Amir
;
Gamze Ulusoy Ghobadi, Turkan
...
IEEE Electron Device Letters. 43 (2022) 10 - p. 1609-1612 , 2022
Link:
https://doi.org/10.1109/led.2022.3199569
RT Journal T1
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2022.3199569&Exemplar=1&LAN=DE A1 Odabasi, Oguz A1 Ghobadi, Amir A1 Gamze Ulusoy Ghobadi, Turkan A1 Unal, Yakup A1 Salkim, Gurur A1 Basar, Gunes A1 Butun, Bayram A1 Ozbay, Ekmel PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 43 IS 10 SP 1609 OP 1612 LK http://dx.doi.org/https://doi.org/10.1109/led.2022.3199569 DO https://doi.org/10.1109/led.2022.3199569 SF ELIB - SuUB Bremen
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