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1 Ergebnisse
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Physics-Based Compact Model of Current Stress-Induced Thres..:
Yang, Tae Jun
;
Park, Jingyu
;
Choi, Sungju
...
IEEE Electron Device Letters. 43 (2022) 10 - p. 1685-1688 , 2022
Link:
https://doi.org/10.1109/led.2022.3202992
RT Journal T1
Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2022.3202992&Exemplar=1&LAN=DE A1 Yang, Tae Jun A1 Park, Jingyu A1 Choi, Sungju A1 Kim, Changwook A1 Han, Moonsup A1 Bae, Jong-Ho A1 Choi, Sung-Jin A1 Kim, Dong Myong A1 Shin, Hong Jae A1 Jeong, Yun Sik A1 Bae, Jong Uk A1 Oh, Chang Ho A1 Park, Dong-Wook A1 Kim, Dae Hwan PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 43 IS 10 SP 1685 OP 1688 LK http://dx.doi.org/https://doi.org/10.1109/led.2022.3202992 DO https://doi.org/10.1109/led.2022.3202992 SF ELIB - SuUB Bremen
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