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1 Ergebnisse
1
Performance Improvement by Enhancing Passivation Layer of p..:
Chou, Sheng-Yao
;
Wu, Pei-Yu
;
Chen, Ming-Chen
...
IEEE Electron Device Letters. 44 (2023) 2 - p. 213-216 , 2023
Link:
https://doi.org/10.1109/led.2022.3232610
RT Journal T1
Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2022.3232610&Exemplar=1&LAN=DE A1 Chou, Sheng-Yao A1 Wu, Pei-Yu A1 Chen, Ming-Chen A1 Chang, Ting-Chang A1 Tsai, Xin-Ying A1 Lin, Shih-Kai A1 Kuo, Ting-Tzu A1 Huang, Wei-Chen A1 Tu, Hong-Yi A1 Wu, Chung-Wei A1 Tsai, Tsung-Ming A1 Huang, Jen-Wei PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 44 IS 2 SP 213 OP 216 LK http://dx.doi.org/https://doi.org/10.1109/led.2022.3232610 DO https://doi.org/10.1109/led.2022.3232610 SF ELIB - SuUB Bremen
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