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1 Ergebnisse
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Gate-Bias Induced RON Instability in p-GaN Power HEMTs:
Chini, Alessandro
;
Zagni, Nicolò
;
Verzellesi, Giovanni
...
IEEE Electron Device Letters. 44 (2023) 6 - p. 915-918 , 2023
Link:
https://doi.org/10.1109/led.2023.3265503
RT Journal T1
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2023.3265503&Exemplar=1&LAN=DE A1 Chini, Alessandro A1 Zagni, Nicolò A1 Verzellesi, Giovanni A1 Cioni, Marcello A1 Giorgino, Giovanni A1 Nicotra, Maria Concetta A1 Castagna, Maria Eloisa A1 Iucolano, Ferdinando PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 44 IS 6 SP 915 OP 918 LK http://dx.doi.org/https://doi.org/10.1109/led.2023.3265503 DO https://doi.org/10.1109/led.2023.3265503 SF ELIB - SuUB Bremen
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