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1 Ergebnisse
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High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted ..:
Yu, Xinxin
;
Gong, Hehe
;
Zhou, Jianjun
...
IEEE Electron Device Letters. 44 (2023) 7 - p. 1060-1063 , 2023
Link:
https://doi.org/10.1109/led.2023.3282454
RT Journal T1
High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2023.3282454&Exemplar=1&LAN=DE A1 Yu, Xinxin A1 Gong, Hehe A1 Zhou, Jianjun A1 Shen, Zhenghao A1 Xu, Wenhui A1 You, Tiangui A1 Wang, Jian A1 Zhang, Shengnan A1 Wang, Yingmin A1 Zhang, Kai A1 Tao, Ran A1 Wu, Yun A1 Ren, Fang-Fang A1 Ou, Xin A1 Kong, Yuechan A1 Li, Zhonghui A1 Chen, Tangsheng A1 Chen, Dunjun A1 Gu, Shulin A1 Zheng, Youdou A1 Ye, Jiandong A1 Zhang, Rong PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 44 IS 7 SP 1060 OP 1063 LK http://dx.doi.org/https://doi.org/10.1109/led.2023.3282454 DO https://doi.org/10.1109/led.2023.3282454 SF ELIB - SuUB Bremen
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