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1 Ergebnisse
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High VTH and Improved Gate Reliability in P-GaN Gate HEMTs ..:
Jia, Mao
;
Hou, Bin
;
Yang, Ling
...
IEEE Electron Device Letters. 44 (2023) 9 - p. 1404-1407 , 2023
Link:
https://doi.org/10.1109/led.2023.3295064
RT Journal T1 <Title>High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2023.3295064&Exemplar=1&LAN=DE A1 Jia, Mao A1 Hou, Bin A1 Yang, Ling A1 Jia, Fuchun A1 Niu, Xuerui A1 Du, Jiale A1 Chang, Qingyuan A1 Zhang, Meng A1 Wu, Mei A1 Zhang, Xinchuang A1 Lu, Hao A1 Ma, Xiaohua A1 Hao, Yue PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 44 IS 9 SP 1404 OP 1407 LK http://dx.doi.org/https://doi.org/10.1109/led.2023.3295064 DO https://doi.org/10.1109/led.2023.3295064 SF ELIB - SuUB Bremen
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