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1 Ergebnisse
1
Heterointegrated Ga2O3-on-SiC RF MOSFETs With f T/f max of ..:
Yu, Xinxin
;
Xu, Wenhui
;
Wang, Yibo
...
IEEE Electron Device Letters. 44 (2023) 12 - p. 1951-1954 , 2023
Link:
https://doi.org/10.1109/led.2023.3327134
RT Journal T1
Heterointegrated Ga2O3-on-SiC RF MOSFETs With f T/f max of 47/51 GHz by Ion-Cutting Process
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2023.3327134&Exemplar=1&LAN=DE A1 Yu, Xinxin A1 Xu, Wenhui A1 Wang, Yibo A1 Qiao, Bing A1 Shen, Rui A1 Zhou, Jianjun A1 Li, Zhonghui A1 You, Tiangui A1 Shen, Zhenghao A1 Zhang, Kai A1 Ren, Fang-Fang A1 Tang, Dongming A1 Ou, Xin A1 Han, Genquan A1 Kong, Yuechan A1 Chen, Tangsheng A1 Gu, Shulin A1 Zheng, Youdou A1 Ye, Jiandong A1 Zhang, Rong PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 44 IS 12 SP 1951 OP 1954 LK http://dx.doi.org/https://doi.org/10.1109/led.2023.3327134 DO https://doi.org/10.1109/led.2023.3327134 SF ELIB - SuUB Bremen
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