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1 Ergebnisse
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Enhancing Reliability of Short-Channel Dual Gate InGaZnO Th..:
Zhou, Kuan-Ju
;
Chang, Ting-Chang
;
Yen, Po-Yu
...
IEEE Electron Device Letters. 45 (2024) 4 - p. 593-596 , 2024
Link:
https://doi.org/10.1109/led.2024.3363131
RT Journal T1
Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2024.3363131&Exemplar=1&LAN=DE A1 Zhou, Kuan-Ju A1 Chang, Ting-Chang A1 Yen, Po-Yu A1 Chen, Yu-An A1 Chien, Ya-Ting A1 Huang, Bo-Shen A1 Lee, Po-Yi A1 Juan, Tzu-Hsuan A1 Sze, Simon M. A1 Fan, Yang-Shun A1 Huang, Chen-Shuo A1 Tsai, Chih-Hung PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 45 IS 4 SP 593 OP 596 LK http://dx.doi.org/https://doi.org/10.1109/led.2024.3363131 DO https://doi.org/10.1109/led.2024.3363131 SF ELIB - SuUB Bremen
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