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1 Ergebnisse
1
Suppression of Gate-Induced-Drain-Leakage Utilizing Local P..:
Kwak, Been
;
Lee, Kitae
;
Kim, Sihyun
.
IEEE Electron Device Letters. 45 (2024) 5 - p. 813-816 , 2024
Link:
https://doi.org/10.1109/led.2024.3370592
RT Journal T1
Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2024.3370592&Exemplar=1&LAN=DE A1 Kwak, Been A1 Lee, Kitae A1 Kim, Sihyun A1 Kwon, Daewoong PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 45 IS 5 SP 813 OP 816 LK http://dx.doi.org/https://doi.org/10.1109/led.2024.3370592 DO https://doi.org/10.1109/led.2024.3370592 SF ELIB - SuUB Bremen
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