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1 Ergebnisse
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1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With..:
Liu, Li
;
Wang, Jue
;
Ren, Na
..
IEEE Electron Device Letters. 45 (2024) 8 - p. 1492-1495 , 2024
Link:
https://doi.org/10.1109/led.2024.3404041
RT Journal T1 <Title>1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm2)</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_led.2024.3404041&Exemplar=1&LAN=DE A1 Liu, Li A1 Wang, Jue A1 Ren, Na A1 Guo, Qing A1 Sheng, Kuang PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 0741-3106 SN 1558-0563 JF IEEE Electron Device Letters VO 45 IS 8 SP 1492 OP 1495 LK http://dx.doi.org/https://doi.org/10.1109/led.2024.3404041 DO https://doi.org/10.1109/led.2024.3404041 SF ELIB - SuUB Bremen
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