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Investigation and Modeling of Etching Through Silicon Carbi..:
Mackowiak, Piotr
;
Erbacher, Kolja
;
Schiffer, Michael
...
IEEE Transactions on Components, Packaging and Manufacturing Technology. 12 (2022) 3 - p. 437-445 , 2022
Link:
https://doi.org/10.1109/tcpmt.2021.3123384
RT Journal T1 <Title>Investigation and Modeling of Etching Through Silicon Carbide Vias (TSiCV) for SiC Interposer and Deep SiC Etching for Harsh Environment MEMS by DoE</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tcpmt.2021.3123384&Exemplar=1&LAN=DE A1 Mackowiak, Piotr A1 Erbacher, Kolja A1 Schiffer, Michael A1 Manier, Charles-Alix A1 Topper, Michael A1 Ngo, Ha-Duong A1 Schneider-Ramelow, Martin A1 Lang, Klaus-Dieter PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 2156-3950 SN 2156-3985 JF IEEE Transactions on Components, Packaging and Manufacturing Technology VO 12 IS 3 SP 437 OP 445 LK http://dx.doi.org/https://doi.org/10.1109/tcpmt.2021.3123384 DO https://doi.org/10.1109/tcpmt.2021.3123384 SF ELIB - SuUB Bremen
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