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1 Ergebnisse
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Investigation of Anomalous Hysteresis in MOS Devices With Z..:
Lu, Qifeng
;
Qi, Yanfei
;
Zhao, Ce Zhou
...
IEEE Transactions on Device and Materials Reliability. 17 (2017) 3 - p. 526-530 , 2017
Link:
https://doi.org/10.1109/tdmr.2017.2731796
RT Journal T1 <Title>Investigation of Anomalous Hysteresis in MOS Devices With ZrO2Gate Dielectrics</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tdmr.2017.2731796&Exemplar=1&LAN=DE A1 Lu, Qifeng A1 Qi, Yanfei A1 Zhao, Ce Zhou A1 Liu, Chenguang A1 Zhao, Chun A1 Taylor, Stephen A1 Chalker, Paul R. PB Institute of Electrical and Electronics Engineers (IEEE) YR 2017 SN 1530-4388 SN 1558-2574 JF IEEE Transactions on Device and Materials Reliability VO 17 IS 3 SP 526 OP 530 LK http://dx.doi.org/https://doi.org/10.1109/tdmr.2017.2731796 DO https://doi.org/10.1109/tdmr.2017.2731796 SF ELIB - SuUB Bremen
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