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Revealing the Impact of Gate Area Scaling on Charge Trappin..:

Tselios, K. ; Knobloch, T. ; Waldhoer, D....
IEEE Transactions on Device and Materials Reliability.  23 (2023)  3 - p. 355-362 , 2023
Link: https://doi.org/10.1109/tdmr.2023.3262141