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Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-..:
Zagni, Nicolò
;
Gao, Veronica Zhan
;
Verzellesi, Giovanni
...
IEEE Transactions on Device and Materials Reliability. 23 (2023) 4 - p. 453-460 , 2023
Link:
https://doi.org/10.1109/tdmr.2023.3305033
RT Journal T1
Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tdmr.2023.3305033&Exemplar=1&LAN=DE A1 Zagni, Nicolò A1 Gao, Veronica Zhan A1 Verzellesi, Giovanni A1 Chini, Alessandro A1 Pantellini, Alessio A1 Natali, Marco A1 Lucibello, Andrea A1 Latessa, Luca A1 Lanzieri, Claudio A1 De Santi, Carlo A1 Meneghini, Matteo A1 Meneghesso, Gaudenzio A1 Zanoni, Enrico PB Institute of Electrical and Electronics Engineers (IEEE) YR 2023 SN 1530-4388 SN 1558-2574 JF IEEE Transactions on Device and Materials Reliability VO 23 IS 4 SP 453 OP 460 LK http://dx.doi.org/https://doi.org/10.1109/tdmr.2023.3305033 DO https://doi.org/10.1109/tdmr.2023.3305033 SF ELIB - SuUB Bremen
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