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1 Ergebnisse
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Single-Event Burnout Effects of Complementary LDMOS Devices..:
Chen, Chonghao
;
Xu, Jiang
;
Chen, Zhuojun
IEEE Transactions on Device and Materials Reliability. 24 (2024) 3 - p. 401-406 , 2024
Link:
https://doi.org/10.1109/tdmr.2024.3420391
RT Journal T1 <Title>Single-Event Burnout Effects of Complementary LDMOS Devices in High-Voltage Integrated Circuits</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_tdmr.2024.3420391&Exemplar=1&LAN=DE A1 Chen, Chonghao A1 Xu, Jiang A1 Chen, Zhuojun PB Institute of Electrical and Electronics Engineers (IEEE) YR 2024 SN 1530-4388 SN 1558-2574 JF IEEE Transactions on Device and Materials Reliability VO 24 IS 3 SP 401 OP 406 LK http://dx.doi.org/https://doi.org/10.1109/tdmr.2024.3420391 DO https://doi.org/10.1109/tdmr.2024.3420391 SF ELIB - SuUB Bremen
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