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1 Ergebnisse
1
Effect of source extension junction depth and substrate dop..:
Woo Young Choi
;
Jae Young Song
;
Jong Duk Lee
.
IEEE Transactions on Electron Devices. 53 (2006) 5 - p. 1282-1285 , 2006
Link:
https://doi.org/10.1109/ted.2006.872097
RT Journal T1
Effect of source extension junction depth and substrate doping concentration on I-MOS device characteristics
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2006.872097&Exemplar=1&LAN=DE A1 Woo Young Choi A1 Jae Young Song A1 Jong Duk Lee A1 Byung-Gook Park PB Institute of Electrical and Electronics Engineers (IEEE) YR 2006 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 53 IS 5 SP 1282 OP 1285 LK http://dx.doi.org/https://doi.org/10.1109/ted.2006.872097 DO https://doi.org/10.1109/ted.2006.872097 SF ELIB - SuUB Bremen
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