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1 Ergebnisse
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Program/Erase Characteristics of Amorphous Gallium Indium Z..:
Yin, Huaxiang
;
Hyun, Jaewoong
;
Park, Youngsoo
...
IEEE Transactions on Electron Devices. 55 (2008) 8 - p. 2071-2077 , 2008
Link:
https://doi.org/10.1109/ted.2008.926727
RT Journal T1
Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2008.926727&Exemplar=1&LAN=DE A1 Yin, Huaxiang A1 Hyun, Jaewoong A1 Park, Youngsoo A1 Kim, Sunil A1 Lim, Hyuck A1 Min, Yosep A1 Kim, Chang Jung A1 Song, Ihun A1 Park, Jaechul A1 Kim, Sang-Wook A1 Tikhonovsky, Alexander PB Institute of Electrical and Electronics Engineers (IEEE) YR 2008 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 55 IS 8 SP 2071 OP 2077 LK http://dx.doi.org/https://doi.org/10.1109/ted.2008.926727 DO https://doi.org/10.1109/ted.2008.926727 SF ELIB - SuUB Bremen
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