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InAs Diodes Fabricated Using Be Ion Implantation:
White, Benjamin S.
;
Sandall, Ian C.
;
David, John P. R.
.
IEEE Transactions on Electron Devices. 62 (2015) 9 - p. 2928-2932 , 2015
Link:
https://doi.org/10.1109/ted.2015.2456434
RT Journal T1 <Title>InAs Diodes Fabricated Using Be Ion Implantation</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2015.2456434&Exemplar=1&LAN=DE A1 White, Benjamin S. A1 Sandall, Ian C. A1 David, John P. R. A1 Tan, Chee Hing PB Institute of Electrical and Electronics Engineers (IEEE) YR 2015 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 62 IS 9 SP 2928 OP 2932 LK http://dx.doi.org/https://doi.org/10.1109/ted.2015.2456434 DO https://doi.org/10.1109/ted.2015.2456434 SF ELIB - SuUB Bremen
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