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1 Ergebnisse
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Impact of the Gate and Insulator Geometrical Model on the S..:
Logoteta, Demetrio
;
Cavassilas, Nicolas
;
Cresti, Alessandro
..
IEEE Transactions on Electron Devices. 65 (2018) 2 - p. 424-430 , 2018
Link:
https://doi.org/10.1109/ted.2017.2785123
RT Journal T1
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2017.2785123&Exemplar=1&LAN=DE A1 Logoteta, Demetrio A1 Cavassilas, Nicolas A1 Cresti, Alessandro A1 Pala, Marco G. A1 Bescond, Marc PB Institute of Electrical and Electronics Engineers (IEEE) YR 2018 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 65 IS 2 SP 424 OP 430 LK http://dx.doi.org/https://doi.org/10.1109/ted.2017.2785123 DO https://doi.org/10.1109/ted.2017.2785123 SF ELIB - SuUB Bremen
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