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Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Powe..:

Agarwal, Aditi ; Baliga, B. Jayant
IEEE Transactions on Electron Devices.  69 (2022)  3 - p. 1233-1241 , 2022
Link: https://doi.org/10.1109/ted.2022.3148058