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Bias Temperature Instability of 4H-SiC p- and n-Channel MOS..:

Yang, Liao ; Bai, Yun ; Li, Chengzhan...
IEEE Transactions on Electron Devices.  69 (2022)  6 - p. 3042-3046 , 2022
Link: https://doi.org/10.1109/ted.2022.3166126