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1 Ergebnisse
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Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best En..:
Lama, Giusy
;
Bernard, Mathieu
;
Bourgeois, Guillaume
...
IEEE Transactions on Electron Devices. 69 (2022) 8 - p. 4248-4253 , 2022
Link:
https://doi.org/10.1109/ted.2022.3184659
RT Journal T1
Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best Endurance and Reduced Variability
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3184659&Exemplar=1&LAN=DE A1 Lama, Giusy A1 Bernard, Mathieu A1 Bourgeois, Guillaume A1 Garrione, Julien A1 Meli, Valentina A1 Castellani, Niccolo A1 Sabbione, Chiara A1 Prazakova, Lucie A1 Fernandez Rodas, Diana-Stephany A1 Nolot, Emmanuel A1 Cyrille, Marie Claire A1 Andrieu, Francois A1 Navarro, Gabriele PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 69 IS 8 SP 4248 OP 4253 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3184659 DO https://doi.org/10.1109/ted.2022.3184659 SF ELIB - SuUB Bremen
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