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1 Ergebnisse
1
DDDMOSFET Performance Improvement by Gate Oxide Removal Fol..:
Wang, Xue-Jiao
;
Li, Zhao-Yang
;
Yan, Zhao-Zhang
...
IEEE Transactions on Electron Devices. 69 (2022) 9 - p. 5368-5372 , 2022
Link:
https://doi.org/10.1109/ted.2022.3190249
RT Journal T1
DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots
UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3190249&Exemplar=1&LAN=DE A1 Wang, Xue-Jiao A1 Li, Zhao-Yang A1 Yan, Zhao-Zhang A1 Chen, Lei-Gang A1 Li, Zhong-Hua A1 Jiang, Yu-Long A1 Wan, Jing PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 69 IS 9 SP 5368 OP 5372 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3190249 DO https://doi.org/10.1109/ted.2022.3190249 SF ELIB - SuUB Bremen
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