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AC-Stress Degradation and Its Anneal in SiC MOSFETs:
Habersat, Daniel B.
;
Lelis, Aivars J.
IEEE Transactions on Electron Devices. 69 (2022) 9 - p. 5068-5073 , 2022
Link:
https://doi.org/10.1109/ted.2022.3190815
RT Journal T1 <Title>AC-Stress Degradation and Its Anneal in SiC MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1109_ted.2022.3190815&Exemplar=1&LAN=DE A1 Habersat, Daniel B. A1 Lelis, Aivars J. PB Institute of Electrical and Electronics Engineers (IEEE) YR 2022 SN 0018-9383 SN 1557-9646 JF IEEE Transactions on Electron Devices VO 69 IS 9 SP 5068 OP 5073 LK http://dx.doi.org/https://doi.org/10.1109/ted.2022.3190815 DO https://doi.org/10.1109/ted.2022.3190815 SF ELIB - SuUB Bremen
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